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參數(shù)資料
| 型號： | BDS11 |
| 英文描述： | Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| 中文描述： | 硅npn型Epitiaxial中的晶體管的TO220金屬包裝和SMD1包（npn型外延型硅晶體管（的TO220金屬封裝或SMD1封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 20K |
| 代理商： | BDS11 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 7/00
Parameter
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
Min.
Typ.
Max.
500
500
500
1
1
1
Unit
LA B
S E M E
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
V
EB
= 5V
BDS10
BDS11
BDS12
I
C
= 5A
I
C
= 10A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
C
= 10A
I
B
= 2.5A
I
C
= 5A
I
C
= 0.5A
I
C
= 5A
I
C
= 10A
I
C
= 0.5A
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
1
60
80
100
1
3
2.5
1.5
250
150
40
15
5
3
m
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THcase-sink
R
THj-a
Thermal resistance junction - case
Thermal resistance case - heatsink **
Thermal resistance junction - ambient
Max. 1.4
°
C/W
Typ. 1.0
°
C/W
Max. 80
°
C/W
** Smooth flat surface using thermal grease.
Parameter
On Time
Storage Time
Fall Time
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
=
–
I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
m
s
m
s
m
s
t
on
t
s
t
r
(t
d
+ t
r
)
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDS12 | Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS13 | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS14 | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS15 | Silicon PNP Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(PNP外延型硅晶體管(TO220金屬封裝或SMD1封裝)) |
| BDS15 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDS11CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BDS11IG | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE |
| BDS11SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS11SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES |
| BDS12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
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