型號: | BD830-6 |
英文描述: | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 |
中文描述: | 晶體管|晶體管|進(jìn)步黨| 80V的五(巴西)總裁| 1.5AI(丙)|至202 |
文件頁數(shù): | 2/5頁 |
文件大?。?/td> | 202K |
代理商: | BD830-6 |
相關(guān)PDF資料 |
PDF描述 |
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BD878 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
BD880 | SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA RoHS Compliant: Yes |
BDA234P | DIODE TVS 6.0V 500W BI-DIR |
BDA218P | DIODE TVS 33V 500W UNI-DIR |
BDA224P | TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:45V; Breakdown Voltage, Vbr:50V; Peak Pulse Power PPK @ 10x1000uS:500W; Package/Case:DO-204AC; Leaded Process Compatible:Yes; Peak Pulse Current IPP @ 10x1000uS:7A |
相關(guān)代理商/技術(shù)參數(shù) |
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