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參數(shù)資料
| 型號： | BD829-6 |
| 英文描述： | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁|甲一（c）|至202 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 204K |
| 代理商： | BD829-6 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD828 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202AA |
| BD826 | SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes |
| BD826-10 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| BD826-16 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202 |
| BD826-6 | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA |
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