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參數(shù)資料
| 型號(hào)： | BD806 |
| 英文描述： | SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:225A; Gate Trigger Current Max, Igt:30uA RoHS Compliant: Yes |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 45V的五（巴西）總裁| 10A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 176K |
| 代理商： | BD806 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD825 | NPN power transistor(NPN功率晶體管) |
| BD827-10 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 |
| BD825-10 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| BD825-16 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 |
| BD825-6 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD807 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BD808 | 制造商:Motorola Inc 功能描述: |
| BD808/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Plastic High Power Silicon PNP Transistor |
| BD809 | 功能描述:兩極晶體管 - BJT 10A 80V 90W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD809/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Plastic High Power Silicon Transistor |
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