參數(shù)資料
型號(hào)： BD792
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝： PLASTIC, FORMERLY TO-126, 3 PIN
文件頁數(shù)： 34/61頁
文件大?。?/td> 372K
代理商： BD792
BD789 BD791 BD790 BD792
3–201
Motorola Bipolar Power Transistor Device Data
500
0.04
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
2.0
100
50
30
300
70
h
FE
,DC
C
URREN
T
GAIN
TJ = 150°C
25
°C
–55
°C
200
20
4.0
NPN
BD789, BD791
NPN
BD790, BD792
VCE = 1.0 V
VCE = 3.0 V
0.06
200
0.04
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
2.0
50
20
100
30
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
–55
°C
70
2.0
4.0
VCE = 1.0 V
VCE = 3.0 V
0.06
5.0
7.0
10
3.0
5.0
7.0
1.4
0.04
IC, COLLECTOR CURRENT (AMP)
0.2
0.6
2.0
4.0
0.6
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat)
V,
V
OL
TAGE
(
V
OL
T
S
)
Figure 9. “On” Voltages
0.1
1.0
0.4
1.0
0.8
VBE(on) @ VCE = 3.0 V
IC, COLLECTOR CURRENT (AMP)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
V
,VOL
TAGE
(VOL
TS)
VBE(on) @ VCE = 3.0 V
0.06
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
1.2
0.2
1.4
0.6
0.4
1.0
0.8
1.2
0.2
IC/IB = 10
5.0
VCE(sat)
IC/IB = 10
5.0
+ 2.5
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+ 2.0
+ 1.5
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
θVB FOR VBE
*
θVC FOR VCE(sat)
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.0
25
°C to 150°C
– 55
°C to 25°C
25
°C to 150°C
– 55
°C to 25°C
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
+ 2.5
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+ 2.0
+ 1.5
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
θVB FOR VBE
*
θVC FOR VCE(sat)
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.0
25
°C to 150°C
– 55
°C to 25°C
25
°C to 150°C
– 55
°C to 25°C
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
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