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參數(shù)資料
| 型號(hào)： | BD535K |
| 英文描述： | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 8A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 144K |
| 代理商： | BD535K |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD536J | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA |
| BD536K | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-220AB |
| BD537J | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 8A I(C) | TO-220AB |
| BD537K | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 8A I(C) | TO-220AB |
| BD538J | Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD535P2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BD536 | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD5360 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
| BD5360FVE | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
| BD5360FVETR | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:Free Delay Time Setting CMOS Voltage Detector IC Series |
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