參數(shù)資料
型號(hào): BD534
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片功率晶體管
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 36K
代理商: BD534
2000 Fairchild Semiconductor International
B
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area
Figure 4. Power Derating
-0.01
-0.1
-1
-10
10
100
1000
V
CE
= -2V
h
F
,
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-0.01
-0.1
-1
V
BE
(sat)
V
CE
(sat)
I
C
= 10 I
B
V
B
(
C
(
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.1
-1
-10
-100
100
μ
s
BD538
BD536
BD534
10
μ
s
1ms
10ms
DC
I
C
(max)
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
P
C
[
T
C
[
o
C], CASE TEMPERATURE
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