型號: | BD533K |
英文描述: | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 8A I(C) | TO-220AB |
中文描述: | 晶體管|晶體管|叩| 45V的五(巴西)總裁| 8A條一(c)| TO - 220AB現(xiàn)有 |
文件頁數(shù): | 3/3頁 |
文件大小: | 144K |
代理商: | BD533K |
相關(guān)PDF資料 |
PDF描述 |
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BD534FI | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA |
BD534FP | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-220FP |
BD534K | Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A |
BD535J | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 8A I(C) | TO-220AB |
BD535K | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BD534 | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
BD5340 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
BD5340FVE | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
BD5340FVE-TR | 功能描述:電壓監(jiān)測器/監(jiān)控器 CMOS DETEC VOLT 4.0V RoHS:否 制造商:Texas Instruments 監(jiān)測電壓數(shù):2 監(jiān)測電壓:Adjustable 輸出類型:Open Drain 欠電壓閾值: 過電壓閾值: 準(zhǔn)確性:1 % 工作電源電壓:1.5 V to 6.5 V 工作電源電流:1.8 uA 最大工作溫度:+ 125 C 封裝 / 箱體:SON-6 安裝風(fēng)格:SMD/SMT |
BD5340G | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |