• 參數資料
    型號: BD435
    元件分類: 開關
    英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
    文件頁數: 1/7頁
    文件大?。?/td> 525K
    代理商: BD435
    A-78
    APEM
    www.apem.com
    12000X778 series
    High performance toggle switches - threaded bushing 11,9 (15/32)
    Distinctive features
    A
    K
    Approval and lists
    CECC 96201-005
    CECC 96201-008
    MUAHAG and QPL listed (Europe only)
    French defence approved : DAT list No A5999 X001.
    This range of professional toggle switches is suitable for use in military and
    other high specification environments.
    K
    Contacts
    Highly reliable contacts suitable for low level applications (10mA 50mV -
    10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
    4A 30VDC max.)
    K
    Pinned lever
    The base of the switch lever is pinned to the bushing, thus earthing the lever to
    the bushing. This also provides strain relief to protect the switch if accidentally
    knocked.
    K
    Double shell case
    For high mechanical strength and high electrical insulation.
    K
    Compact size
    The small rear end of the switch allows space saving behind the panel.
    K
    Finish
    Matt black finish on body, bushing, lever and hardware.
    K
    Sealing
    Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
    have full rear end sealing.
    K
    Accessories
    A comprehensive range of protection boots (both full and half length), locking
    levers and security caps are available.
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    相關代理商/技術參數
    參數描述
    BD435 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126
    BD435_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium Power Silicon NPN Transistor
    BD435G 功能描述:兩極晶體管 - BJT BIP NPN 4A 22V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    BD435S 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    BD435S_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor