參數(shù)資料
型號: BD228
英文描述: NPN Power Transistors
中文描述: NPN電源晶體管
文件頁數(shù): 2/8頁
文件大小: 45K
代理商: BD228
1997 Mar 06
2
Philips Semiconductors
Product specification
NPN power transistors
BD226; BD228; BD230
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD227, BD229 and BD231.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
BD226
BD228
BD230
collector-emitter voltage
BD226
BD228
BD230
peak collector current
total power dissipation
DC current gain
open emitter
45
60
100
V
V
V
V
CEO
open base
40
25
125
45
60
80
3
12.5
250
V
V
V
A
W
I
CM
P
tot
h
FE
T
mb
62
°
C
I
C
= 150 mA; V
CE
= 2 V
I
C
= 1 A; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
f
T
transition frequency
MHz
相關(guān)PDF資料
PDF描述
BD227 PNP Power Transistors
BD229 PNP Power Transistors
BD232 TRANSISTOR HOCHSPANNUNG BIPOLAR
BD242 PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
BD242A PNP SILICON EPITAXIAL BASE POWER TRANSISTORS
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