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參數(shù)資料
| 型號： | BD175-16 |
| 英文描述： | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|叩| 45V的五（巴西）總裁| 3A條一（c）|至126 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 28K |
| 代理商： | BD175-16 |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
D
175
D
176
177
178
60
60
5.0
3.0
7.0
30
150
179
180
80
80
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Collector current (Peak value)
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
max.
max.
max.
max.
max.
max.
max.
45
45
V
V
V
A
A
W
°C
–65 to +150
oC
THERMAL RESISTANCE
From junction to case
R
th j–c
4.16
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
D
175
D
176
177
178
179
180
Collector cutoff current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 1 A; I
B
= 0.1 A
Base-emitter on voltage
I
C
= 1 A; V
CE
= 2 V
D.C. curent gain
I
C
= 150 mA; V
CE
= 2 V**
I
C
= 1 A; V
CE
= 2 V
Transition frequency
I
C
= 250 mA; V
CE
= 10V
I
CBO
I
CBO
I
CBO
max. 100
max.
max.
–
–
–
μA
μA
μA
–
–
100
–
100
I
EBO
max.
1.0
mA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
45
45
60
60
5.0
80
80
V
V
V
V
CEsat
*
max.
0.8
V
V
BE(on)
*
max.
1.3
V
h
FE
*
h
FE
*
min.
min.
40
15
f
T
min.
3.0
MHz
**
h
FE
classification
:
–6
min.
max. 100
40
–10
min.
max. 160
63
only BD175, 176
–16
min.
max. 250
100
*Pulse test: pulse duration
≤
300 μs; duty cycle
≤
1.5%.
BD175, BD177, BD179
BD176, BD178, BD180
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