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參數(shù)資料
| 型號： | BD170 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|進步黨| 80V的五（巴西）總裁| 1.5AI（丙）|至126 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 27K |
| 代理商： | BD170 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
Base current
Total power dissipation up to T
A
= 25°C
Derate above 25°C
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
I
C
I
B
P
tot
max.
max.
max.
max
max.
max
max.
1.5
0.5
1.25
10
20
160
150
A
A
W
mW/
°
C
W
mW/
°
C
°C
oC
P
tot
T
j
T
stg
–65 to +150
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
th jc
R
th ja
6.25
100
°C/W
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
166
168
170
Collector cutoff current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 0.1 A; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
Base-emitter on voltage
I
C
= 0.5 A; V
CE
= 2 V
D.C. curent gain
I
C
= 0.15 A; V
CE
= 2 V
I
C
= 0.5 A; V
CE
= 2 V
Transition frequency f = 1 MHz
I
C
= 500 mA; V
CE
= 2V
I
CBO
I
CBO
I
CBO
max. 0.1
max.
max.
–
–
–
mA
mA
mA
–
–
0.1
–
0.1
I
EBO
max.
1.0
mA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
45
45
60
60
5.0
80
80
V
V
V
V
CEsat
*
max.
0.5
V
V
BE(on)
*
max.
0.95
V
h
FE
*
h
FE
*
min.
min.
40
15
f
T
min.
6.0
MHz
*Pulse test: pulse width
≤
300 μs; duty cycle
≤
2%.
BD166, BD168, BD170
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