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參數(shù)資料
| 型號： | BD139-25 |
| 英文描述： | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 1.5AI（丙）|至126 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BD139-25 |
Continental Device India Limited
Data Sheet
Page 2 of 3
BD135, BD137, BD139
Collector current
Base current
Total power dissipation up to T
A
= 25°C P
tot
Derate above 25°C
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
I
C
I
B
max.
max.
max.
max
max.
max
max.
1.5
0.5
1.25
10
12.5
100
150
A
A
W
mW/°C
W
mW/°C
°C
oC
P
tot
T
j
T
stg
–65 to +150
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
th j–c
R
th j–a
10
100
°C/W
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
135
137
139
Collector cutoff current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
C
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 0.03 A; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
Base-emitter on voltage
I
C
= 0.5A; V
CE
= 2V
D.C. current gain
I
C
= 0.005 A; V
CE
= 2 V*
I
CBO
I
CBO
max.
max.
0.1
10
μA
μA
I
EBO
max.
10
μA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
45
45
60
60
5.0
80
100
V
V
V
V
CEsat
*
max.
0.5
V
V
BE(on)
*
max.
1.0
V
h
FE
*
min.
25
I
C
= 0.15 A; V
CE
= 2 V**
h
FE
*
min.
max.
40
250
I
C
= 0.5 A; V
CE
= 2 V*
h
FE
*
min.
25
**
h
FE
classification
:
–6
min.
max. 100
40
–10
min.
max. 160
63
–16
min.
max. 250
100
–25
min.
max. 400
160
*Pulse test: pulse width
≤
300 μs, duty cycle
≤
2%.
相關(guān)PDF資料 |
PDF描述 |
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| BD135-10 | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
| BD135-16 | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Gray; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
| BD135 | NPN SILICON TRANSISTORS |
| BD138 | PNP power transistor(PNP功率晶體管) |
| BD136 | PNP power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD139-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS |
| BD1396S | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD1396STU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD139G | 功能描述:兩極晶體管 - BJT 1.5A 80V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD139G-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN POWER TRANSISTORS |
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