參數(shù)資料
型號(hào): BD139-10
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistors
中文描述: 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 44K
代理商: BD139-10
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°
C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA; V
CE
= 2 V;
(see Fig.2)
100
10
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
63
25
250
DC current gain
BD135-10; BD137-10; BD139-10
BD135-16; BD137-16; BD139-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
63
100
190
160
250
0.5
1
V
CEsat
V
BE
f
T
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
V
V
MHz
DC current gain ratio of the
complementary pairs
1.3
1.6
h
FE2
h
相關(guān)PDF資料
PDF描述
BD137 NPN power transistors
BD139 NPN power transistors
BD139-16 NPN power transistors
BD137-10 Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Brown; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
BD137-16 Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Red; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
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參數(shù)描述
BD13910S 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD139-10S 制造商:Fairchild Semiconductor Corporation 功能描述:
BD13910STU 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD139-16 功能描述:兩極晶體管 - BJT NPN Silicon Trnsistr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD13916S 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2