參數(shù)資料
型號: BD135
廠商: 意法半導(dǎo)體
英文描述: NPN SILICON TRANSISTORS
中文描述: NPN硅三極管
文件頁數(shù): 2/3頁
文件大?。?/td> 36K
代理商: BD135
Continental Device India Limited
Data Sheet
Page 2 of 3
BD135, BD137, BD139
Collector current
Base current
Total power dissipation up to T
A
= 25°C P
tot
Derate above 25°C
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
I
C
I
B
max.
max.
max.
max
max.
max
max.
1.5
0.5
1.25
10
12.5
100
150
A
A
W
mW/°C
W
mW/°C
°C
oC
P
tot
T
j
T
stg
–65 to +150
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
th j–c
R
th j–a
10
100
°C/W
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
135
137
139
Collector cutoff current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
C
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 0.03 A; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
Base-emitter on voltage
I
C
= 0.5A; V
CE
= 2V
D.C. current gain
I
C
= 0.005 A; V
CE
= 2 V*
I
CBO
I
CBO
max.
max.
0.1
10
μA
μA
I
EBO
max.
10
μA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
45
45
60
60
5.0
80
100
V
V
V
V
CEsat
*
max.
0.5
V
V
BE(on)
*
max.
1.0
V
h
FE
*
min.
25
I
C
= 0.15 A; V
CE
= 2 V**
h
FE
*
min.
max.
40
250
I
C
= 0.5 A; V
CE
= 2 V*
h
FE
*
min.
25
**
h
FE
classification
:
–6
min.
max. 100
40
–10
min.
max. 160
63
–16
min.
max. 250
100
–25
min.
max. 400
160
*Pulse test: pulse width
300 μs, duty cycle
2%.
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