參數(shù)資料
型號： BD135-25
英文描述： Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes
中文描述： 晶體管|晶體管|叩| 45V的五（巴西）總裁| 1.5AI（丙）|至126
文件頁數(shù)： 1/3頁
文件大?。?/td> 36K
代理商： BD135-25
Continental Device India Limited
Data Sheet
Page 1 of 3
BD135, 137, 139
Complementary BD136, 138, 140
Medium Power Linear and Switching Applications
NPN PLASTIC POWER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
135
45
45
137
60
60
1.5
12.5
150
139
100
80
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
D.C. current gain
I
C
= 0.15 A; V
CE
= 2 V
V
CBO
V
CEO
I
C
P
tot
T
j
max.
max.
max.
max.
max.
V
V
A
W
°C
V
CEsat
max.
0.5
V
h
FE
min.
max.
40
250
RATINGS
A
=25 C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
135
45
45
137
60
60
5.0
139
100
80
V
CBO
V
CEO
V
EBO
max.
max.
max.
V
V
V
BD135, BD137, BD139
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
ALL DIMENSIONS IN MM
相關(guān)PDF資料
PDF描述
BD135 NPN power transistors
BD137-25 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
BD139-25 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
BD135-10 Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
BD135-16 Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Gray; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD135-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS
BD1356S 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD1356STU 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD135G 功能描述:兩極晶體管 - BJT 1.5A 45V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD135T 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Power Transistor
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