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參數(shù)資料
| 型號： | BD034-TO-126 |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR (PNP) |
| 中文描述： | 晶體管（進(jìn)步黨） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 100K |
| 代理商： | BD034-TO-126 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD034
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
1.25 W (Tamb=25
℃
)
Collector current
I
CM:
-2.5 A
Collector-base voltage
V
(BR)CBO
: -110 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-100
μA, I
E
=0
-110
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-10
mA, I
B
=0
-80
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-100
μA, I
C
=0
-7
V
Collector cut-off current
I
CBO
V
CB
=
-100
V, I
E
=0
-1
μA
Emitter cut-off current
I
EBO
V
EB
=
-5
V, I
C
=0
-1
μA
h
FE(1)
V
CE
=
-2
V, I
C
=
-100
mA
100
560
DC current gain
h
FE(2)
V
CE
=
-2
V, I
C
=
-1.5
A
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-2
A, I
B
=
-200
mA
-0.5
V
Base-emitter voltage
V
BE
V
CE
=
-5
V, I
C
=
-500
mA
-1
V
Transition frequency
f
T
V
CE
=
-1
V, I
C
=
-250
mA, f=1MHz
3
MHz
CLASSIFICATION OF h
FE(1)
Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560
1 2 3
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
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