參數(shù)資料
型號(hào): BCY79-7
英文描述: Triac; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 晶體管|晶體管|進(jìn)步黨| 45V的五(巴西)總裁|到18
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 50K
代理商: BCY79-7
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY77, BCY78
BCY79
TO-18
Complementary BCY58/59
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BCY77
BCY78
BCY79
UNIT
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Base Current Continuous
Power Dissipation@ Ta=25 degC
@ TC=45 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in Free Air
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCES
VEBO
IC
IB
PD
60
60
5.0
100
50
32
32
5.0
200
50
600
1.0
45
45
5.0
200
50
V
V
V
mA
mA
mW
W
deg C
Tj, Tstg
-65 to +200
Rth(j-a)
Rth(j-c)
450
150
K/W
K/W
SYMBOL TEST CONDITION
VCEO
IC=2mA,IB=0
VCES
IC=10uA, VBE=0
VEBO
IE=1uA, IC=0
ICES
VCE=VCE max,VBE=0
VCE=50V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
BCY77 BCY78
>60
>60
>5.0
<100 <100
<20
-
-
BCY79 UNIT
>45
>45
>5.0
<100
.-
-
<20
>32
>32
>5.0
V
V
V
nA
nA
nA
nA
-
<20
-
TA=150 deg C
VCE=60V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
VCE=VCE, max
VBE=0.2V, Ta=100 deg C
VEB=4V, IC=0
VBE(on) IC=10uA, VCE=5V
IC=2mA, VCE=5V
IC=10mA,VCE=1V
IC=50mA,VCE=1V (2)
IC=100mA,VCE=1V (1)
<10
-
-
<20
-
<10
-
<20
.-
-
uA
uA
uA
uA
<10
<20
ICEX
Emitter Cut off Current
Base Emitter on Voltage
IEBO
<20
<20
<20
nA
V
V
V
V
V
TYP 0.75
TYP 0.55
0.6 to 0.75
TYP 0.68
TYP 0.72
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 4
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