參數(shù)資料
型號: BCY70CSM
英文描述: High Speed Medium Power PNP Switching Transistor(高速、中等功率PNP開關(guān)晶體管)
中文描述: 高速中功率開關(guān)晶體管進步黨(高速,中等功率開關(guān)晶體管進步黨)
文件頁數(shù): 2/3頁
文件大?。?/td> 20K
代理商: BCY70CSM
Parameter
Test Conditions
V
CE
= -20V
V
CE
= -50V
V
CE
= -20V
V
CE
= -45V
V
CE
= -20V
V
CE
= -25V
V
EB
= -5V
I
C
= -10mA
I
C
= -50mA
I
C
= -10mA
BCY70 AND BCY71 ONLY
I
C
= -50mA
Min.
Typ.
Max.
-10
-500
-100
-10
-100
-10
-10
-0.25
-0.5
Unit
BCY70CSM
BCY71CSM
BCY72CSM
Prelim. 1/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
I
B
= -1mA
I
B
= -5mA
I
B
= -1mA
I
B
= -5mA
BCY70
V
CE
= -1V
V
CE
= -1V
V
CE
= -1V
V
CE
= -1V
BCY71
V
CE
= -1V
V
CE
= -1V
V
CE
= -1V
V
CE
= 1V
V
CE
= -1V
BCY72
V
CE
= - 1V
V
CE
= -1V
V
CE
= -10V
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -50mA
I
C
= -0.01mA
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -50mA
I
C
= - 1mA
I
C
= -10mA
I
C
= -.1mA
f = 1KHz
I
C
= -0.1mA
f = 10.7MHz
I
C
= -10mA
f = 100MHz
BCY71 and BCY72
I
C
= 0
f = 1MHz
I
E
= 0
f = 1MHz
V
CE
= -20V
BCY71
V
CE
= -20V
BCY70
V
EB
= -1V
V
CB
= -10V
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
I
CES
Collector Cut-off Current (V
BE
= 0)
I
EBO
Emitter Cutoff Current (I
C
= 0)
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
h
fe
Small Signal Current
f
T
Transition Frequency
C
EBO
Emitter-Base Capacitance
C
CBO
Collector-Base Capacitance
-0.6
-0.9
-1.2
40
45
50
15
60
80
90
100
15
600
40
50
100
400
15
250
200
8
6
nA
nA
m
A
nA
m
A
m
A
V
V
MHz
pF
BCY70
BCY71
BCY72
相關(guān)PDF資料
PDF描述
BCY71CSM High Speed Medium Power PNP Switching Transistor(高速、中等功率PNP開關(guān)晶體管)
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