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參數(shù)資料
| 型號(hào)： | BCX70GL |
| 英文描述： | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | SOT-23 |
| 中文描述： | 晶體管|晶體管|叩| 45V的五（巴西）總裁| 200mA的一（c）| SOT - 23封裝 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | BCX70GL |
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BCX70 series
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 45 V; T
amb
= 150
°
C
I
C
= 0; V
EB
= 4 V
I
C
= 10
μ
A; V
CE
= 5 V
20
20
20
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
collector-emitter saturation
voltage
40
30
100
I
C
= 2 mA; V
CE
= 5 V
120
180
250
380
220
310
460
630
I
C
= 50 mA; V
CE
= 1 V
50
70
90
100
50
100
600
700
550
100
520
650
780
1.7
11
250
350
550
850
1050
750
V
CEsat
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10
μ
A; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz;
note 1
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
mV
mV
mV
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
F
noise figure
2
6
dB
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