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參數(shù)資料
| 型號： | BCX70 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| 中文描述： | ECONOLINE: RJ & RG - 單輸入雙輸出，隔離的直流3千伏或直流4千伏，普通的短路保護電路，UL94V標準，0型封裝材料，效率達到85% |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | BCX70 |
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BCX70 series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
AG
AH
AJ
AK
BCX70G
BCX70H
BCX70J
BCX70K
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1
Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
45
45
5
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCX70J | Surface mount Si-Epitaxial PlanarTransistors |
| BCX70KLT1 | General Purpose Transistors(NPN Silicon) |
| BCX70JLT1 | General Purpose Transistors(NPN Silicon) |
| BCX70GLT1 | General Purpose Transistors(NPN Silicon) |
| BCX70G | Small Signal Transistor (NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCX70G | 功能描述:兩極晶體管 - BJT SOT-23 NPN GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| BCX70G/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | SOT-23 |
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