參數(shù)資料
型號(hào): BCX56-10-BK
廠商: Zetex Semiconductor
英文描述: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
中文描述: SOT89 NPN硅平面中功率晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 83K
代理商: BCX56-10-BK
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BCX56–10R1/D
BCX56-10R1
Preferred Device
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-89
package, which is designed for medium power surface mount
applications.
High Current: 1.0 Amp
Available in 7 inch/1000 unit Tape and Reel
Device Marking: BK
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
80
Vdc
Collector-Base Voltage
V
CBO
100
Vdc
Emitter-Base Voltage
V
EBO
5
Vdc
Collector Current
I
C
1
Adc
Total Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1.)
(Note 2.)
1.56
13
0.67
5.0
Watts
mW/
°
C
Watts
mW/
°
C
Operating and Storage
Temperature Range
T
J
, T
stg
–65 to 150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction-to-Ambient
(surface mounted)
R
θ
JA
(Note 1.)
(Note 2.)
80
190
°
C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
1. FR–4 @ 1.0 X 1.0 inch Pad
2. FR–4 @ Minimum Pad
Device
Package
Shipping
ORDERING INFORMATION
SOT–89
CASE 1213
STYLE 2
http://onsemi.com
MARKING DIAGRAM
BK
Y = Year Code
M = Month Code
BK= Device Code
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 2
BASE
1
EMITTER
3
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
1
2
3
BCX56–10R1
SOT–89
1000/Tape & Reel
YM
相關(guān)PDF資料
PDF描述
BCX56-BH SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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