參數(shù)資料
型號(hào): BCX53-10-AK
廠商: Zetex Semiconductor
英文描述: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
中文描述: SOT89進(jìn)步黨硅平面中功率晶體管
文件頁數(shù): 3/8頁
文件大?。?/td> 42K
代理商: BCX53-10-AK
1999 Apr 19
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BCX51
BCX52
BCX53
collector-emitter voltage
BCX51
BCX52
BCX53
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
45
60
100
V
V
V
V
CEO
open base
65
65
45
60
80
5
1
1.5
200
1.3
+150
150
+150
V
V
V
V
A
A
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point note 1
note 1
94
14
K/W
K/W
相關(guān)PDF資料
PDF描述
BCX53-16 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-16-AL SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX53-AH SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX5410 Obsolete - alternative part: BCX5616
BCX5510 Cartridge Fuse; Current Rating:1.5A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
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