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參數(shù)資料
| 型號(hào)： | BCW73LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | General Purpose Transistors(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 317K |
| 代理商： | BCW73LT1 |
LESHAN RADIO COMPANY, LTD.
M14–1/6
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
45
Vdc
Collector–Base Voltage
V
CBO
50
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current — Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
P
D
225
mW
1.8
mW/°C
R
θ
JA
556
°C/W
P
D
300
2.4
mW
mW/°C
R
θ
JA
T
J
, T
stg
417
°C/W
°C
–55 to +150
DEVICE MARKING
BCW72LT1 = K2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V
(BR)CEO
45
—
—
Vdc
(I
C
= 2.0mAdc, V
EB
= 0 )
Collector–Emitter Breakdown Voltage
V
(BR)CES
45
—
—
Vdc
(I
C
= 2.0 mAdc, V
EB
= 0 )
Collector–Base Breakdown Voltage
V
(BR)CBO
50
—
—
Vdc
(I
C
= 10
μ
Adc, I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
C
= 0)
V
(BR)EBO
5.0
—
—
Vdc
Collector Cutoff Current
I
CBO
(V
CB
= 20 Vdc, I
E
= 0)
—
—
100
nAdc
(V
CB
= 20 Vdc, I
E
= 0, T
A
=100°C )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
—
10
μ
Adc
BCW72LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
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相關(guān)代理商/技術(shù)參數(shù) |
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