參數(shù)資料
型號(hào)： BCW68F
廠商： DIOTEC SEMICONDUCTOR AG
英文描述： Surface mount Si-Epitaxial PlanarTransistors
中文描述： 表面貼裝硅外延PlanarTransistors
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 82K
代理商： BCW68F
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –300 mAdc, VCE = –1.0 Vdc)
Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc)
Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
120
160
60
—
—
—
400
—
—
—
VCE(sat)
VBE(sat)
—
—
–1.5
Vdc
—
—
–2.0
Vdc
Current–Gain — Bandwidth Product
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
100
—
—
MHz
Output Capacitance
(VCB= –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
—
18
pF
Input Capacitance
(VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
—
105
pF
Noise Figure
(IC= –0.2 mAdc, VCE = –5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz,
BW = 200 Hz)
NF
—
—
10
dB
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