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| 型號： | BCW33L |
| 英文描述： | FUSE 50A 32V MIDI BOLT-ON |
| 中文描述： | 晶體管|晶體管|叩| 32V的五（巴西）總裁| 100mA的一（c）| SOT - 23封裝 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 28K |
| 代理商： | BCW33L |
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JUNE 1995
PARTMARKING DETAILS
BCW31 D1 BCW31R D4
BCW32 D2 BCW32R D5
BCW33 D3 BCW33R D6
COMPLEMENTARY TYPES
BCW31 - BCW29
BCW32 - BCW30
BCW33 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
32
V
Collector-Emitter Voltage
32
V
Emitter-Base Voltage
5
V
Peak Pulse Current
200
mA
Continuous Collector Current
100
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Base - Emitter Voltage
V
BE
550
700
mV
I
C
=2mA, V
CE
= 5V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
120
210
250
mV
mV
I
C
=10mA, I
B
=
0.5mA
I
C
=50mA, I
B
=2.5mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
750
850
mV
mV
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
Collector- Base Cut-Off Current
I
CBO
100
10
nA
μ
A
I
E
=0, V
CB
=20V
I
E
=0,V
CB
=20V,T
j =100°C
I
C
=10
μ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
μ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
μ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
Static Forward
Current Transfer
Ratio
BCW31
h
FE
110
90
220
BCW32
h
FE
200
150
450
BCW33
h
FE
420
270
800
Transition Frequency
f
T
300
MHz
I
=10mA, V
CE
=5V
f = 35MHz
Collector Capacitance
C
TC
4
pF
I
=I
=0, V
CB
=10V
f= 1MHz
Noise Figure
N
10
dB
I
C
= 200mA, V
CE
=5V
R
=2K
, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
BCW31
BCW32
BCW33
PAGE NO
C
B
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCW33LR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| BCW33LT1 | 功能描述:兩極晶體管 - BJT 100mA 32V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCW33LT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Transistor NPN |
| BCW33LT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| BCW33LT1G | 功能描述:兩極晶體管 - BJT 100mA 32V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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