型號(hào): | BCW30LR |
英文描述: | BJT |
中文描述: | 雙極型晶體管 |
文件頁(yè)數(shù): | 1/1頁(yè) |
文件大?。?/td> | 107K |
代理商: | BCW30LR |
相關(guān)PDF資料 |
PDF描述 |
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BCW60ALR | FUSE, FAST ACTING 11AFUSE, FAST ACTING 11A; Current, fuse rating:11A; Voltage rating, AC:1000V; Fuse type, blowing characteristic:Fast Acting; Fuse size code:38 x 10.3mm; Approval Bodies:UL; Current, breaking capacity AC:17000A; |
BCW60BLR | Resettable Fuse; Operating Voltage Max:15VDC; Resistance:0.75ohm; Holding Current:0.35A; Tripping Current:0.75A; Fuse Terminals:SMT Caps; Initial Resistance Min:0.3ohm; Interrupting Current Max:100A; Leaded Process Compatible:Yes |
BCW61ALR | BJT |
BCW61BLR | BJT |
BCW61DL | In Line Fuse Holder; Body Material:Thermoset ; Leaded Process Compatible:Yes; Mounting Type:In Line; Voltage Rating:32V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BCW30LT1 | 功能描述:兩極晶體管 - BJT 100mA 32V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
BCW30LT1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
BCW30LT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
BCW30LT1G | 功能描述:兩極晶體管 - BJT 100mA 32V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
BCW30LT3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |