參數(shù)資料
型號: BCV27
廠商: GE Security, Inc.
英文描述: Darlington Transistor(達(dá)林頓晶體管)
中文描述: 達(dá)林頓晶體管(達(dá)林頓晶體管)
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: BCV27
FEATURES
Darlington Transistor
Dimensions in inches and (millimeters)
3
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.118 (3.0)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
FF
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Base
2 = Emitter
3 = Collector
SOT-23
2
1
4/98
BCV27
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
30
V
Collector-Base Voltage
V
CBO
40
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
I
C
300
mA
Peak Collector Current
I
CM
800
mA
Base Current
I
B
100
mA
Power Dissipation at T
SB
= 50 °C
P
tot
300
1)
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
High collector current
High current gain
NPN Silicon Planar Darlington Transistor
for general NF applications
As complementary type, the PNP transistor
BCV26 is recommended.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCV27,215 功能描述:達(dá)林頓晶體管 NPN 30V 500mA RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BCV27 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23
BCV27 制造商:Fairchild Semiconductor Corporation 功能描述:SOT23 DARLINGTON XTR-MARK FF
BCV27_00 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor
BCV27_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors