參數(shù)資料
型號: BCV27
廠商: DIOTEC SEMICONDUCTOR AG
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 表面貼裝硅外延PlanarTransistors
文件頁數(shù): 2/4頁
文件大?。?/td> 117K
代理商: BCV27
B
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 100 nA, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
40
10
V
V
V
μ
A
μ
A
0.1
0.1
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, I
B
= 0.1 mA
4,000
10,000
20,000
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1.0
1.5
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
= 30 mA, V
CE
= 5.0 V,
f = 100 MHz
V
CB
= 30 V, I
E
= 0, f = 1.0 MHz
220
MHz
C
C
Collector Capacitance
3.5
pF
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0
0.01
0.1
1
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
F
25 °C
125 °C
- 40 °C
V = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
P 0
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
V
C
25°C
- 40 oC
125 oC
β
= 1000
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