參數(shù)資料
型號(hào): BCR3PM-12
元件分類: 保險(xiǎn)絲支架,夾子&硬件
英文描述: FUSEHOLDER 3AG SHOCKSAFE FLIPTOP
中文描述: BCR3PM - 12數(shù)據(jù)430K/MAR.20.03
文件頁(yè)數(shù): 11/12頁(yè)
文件大?。?/td> 420K
代理商: BCR3PM-12
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
7
5
3
2
10
0
2 3
5 7 10
1
10
1
7
5
7
3
2
2 3
5 7 10
2
10
0
7
5
3
2
10
0
2 3
5 7 10
1
10
1
7
5
7
3
2
2 3
5 7 10
2
10
0
10
1
10
3
7
5
4
3
2
10
0
2 3
5 7 10
1
10
2
7
5
4
3
2
2 3
5 7 10
2
4
4
I
RGT III
I
RGT I
I
FGT I
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
T
j
= 125
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 150
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
T
j
= 150
°
C
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(T
j
= 125
°
C)
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 125
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
COMMUTATION CHARACTERISTICS
(T
j
= 150
°
C)
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 150
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (
μ
s)
1
G
G
TYPICAL EXAMPLE
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