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參數(shù)資料
| 型號： | BCR20KM |
| 元件分類： | 三端雙向可控硅開關(guān) |
| 英文描述： | BCR20KM Datasheet 385K/MAR.20.03 |
| 中文描述： | BCR20KM數(shù)據(jù)385K/MAR.20.03 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 376K |
| 代理商： | BCR20KM |
Mar. 2002
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
(di/dt)
c
V
D
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
°
C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
T
j
=125
°
C, V
DRM
applied
T
c
=25
°
C, I
TM
=30A, Instantaneous measurement
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
°
C, V
D
=1/2V
DRM
Junction to case
3
T
j
=125
°
C
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise off-state commutating voltage
4
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
2.0
—
!
@
#
!
@
#
Min.
—
—
—
—
—
—
—
—
0.2
—
10
mA
V
V
V
V
mA
mA
mA
V
°
C/W
V/
μ
s
Symbol
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125
°
C
2. Rate of decay of on-atate commutating current
(di/dt)
c
=
–
10A/ms
3. Peak off-state voltage
V
D
=400V
10
0
2
3
5 7
10
1
160
80
2
3
5 7
10
2
120
40
200
240
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 125
°
C
T
j
= 25
°
C
MAXIMUM ON-STATE
CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
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