參數(shù)資料
型號(hào): BCR20AM8L
英文描述: TRIAC|400V V(DRM)|20A I(T)RMS|TO-220AB
中文描述: 可控硅| 400V五(DRM)的|甲口(T)的有效值| TO - 220AB現(xiàn)有
文件頁數(shù): 9/12頁
文件大?。?/td> 376K
代理商: BCR20AM8L
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
160
120
100
60
20
00
5
15
25
40
80
140
10
20
30
30
20
10
40
00
5
10
20
15
25
30
10
1
10
0
2 3
5 7
2 3
5 7
2 3
5 7
10
1
10
2
10
3
7
2 3
5
5
2 3
7
2 3
10
4
10
2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.4
2.2
2.0
1.8
1.6
10
1
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
3
5
60
20
20
10
2
5
7
2
3
7
2
3
60
100
160
140
40
0
40
80
120
10
1
10
2
2 3
5 7
2 3
5 7
2 3
5 7
10
3
10
4
7
5
3
2
10
1
7
5
3
2
10
0
7
5
5
3
2
10
1
60
20
20
60
100
160
140
40
0
40
80
120
GATE CHARACTERISTICS
(
Ι
,
ΙΙ
AND
ΙΙΙ
)
G
GATE CURRENT (mA)
V
GD
= 0.1V
P
GM
= 5W
P
G(AV)
=
0.5W
V
GM
= 10V
V
GT
= 1.5V
I
GM
=
2A
I
FGT I,
I
RGT I,
I
RGT III
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
TYPICAL EXAMPLE
T
°
C
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
O
RMS ON-STATE CURRENT (A)
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
C
°
C
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
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