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參數(shù)資料
| 型號(hào)： | BCR20A8 |
| 英文描述： | TRIAC|400V V(DRM)|20A I(T)RMS|TO-203VAR |
| 中文描述： | 可控硅| 400V五（DRM）的|甲口（T）的有效值|到203VAR |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 376K |
| 代理商： | BCR20A8 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
10
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
120
0
20
40
60
80
100
140
160
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
120
0
20
40
60
80
100
140
160
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
T
j
= 125
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
T
j
= 150
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 150
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 125
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
COMMUTATION CHARACTERISTICS
(T
j
= 125
°
C)
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 150
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
COMMUTATION CHARACTERISTICS
(T
j
= 150
°
C)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
μ
s)
1
G
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCR20A8L | TRIAC|400V V(DRM)|20A I(T)RMS|TO-203VAR |
| BCR20A8R | TRIAC|400V V(DRM)|20A I(T)RMS|TO-203VAR |
| BCR20AM12 | TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
| BCR20AM12L | TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
| BCR20AM12R | TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCR20A8L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|400V V(DRM)|20A I(T)RMS|TO-203VAR |
| BCR20A8R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|400V V(DRM)|20A I(T)RMS|TO-203VAR |
| BCR20AM | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Triac 20 Ampere/400-600 Volts |
| BCR20AM12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
| BCR20AM-12 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Triac 20 Ampere/400-600 Volts |
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