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參數(shù)資料
| 型號(hào)： | BCF81 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | BCF81 |
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BCF81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
50
45
5
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
420
550
100
TYP.
120
210
750
850
2.5
1.2
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
100
10
100
800
250
700
4
nA
μ
A
nA
I
EBO
h
FE
V
CEsat
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
mV
mV
mV
mV
mV
pF
MHz
dB
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
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