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參數(shù)資料
| 型號(hào)： | BCF32 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 42K |
| 代理商： | BCF32 |
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BCF32
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
200
550
TYP.
150
120
210
750
850
2.5
1.2
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μ
A; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
100
10
100
450
250
700
4
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCF32NLP | 制造商:NEC Electronics Corporation 功能描述: |
| BCF32T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | SOT-23 |
| BCF33 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface mount Si-Epitaxial PlanarTransistors |
| BCF33T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | SOT-23 |
| BCF-5 | 功能描述:保險(xiǎn)絲 BCF-5 RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
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