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參數(shù)資料
| 型號(hào)： | BC859 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）) |
| 中文描述： | 小信號(hào)晶體管（民進(jìn)黨）（小信號(hào)晶體管（民進(jìn)黨）） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 231K |
| 代理商： | BC859 |
FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.118 (3.0)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking code
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
Type
Marking
BC856A
B
BC857A
B
C
BC858A
B
C
3A
3B
3E
3F
3G
3J
3K
3L
Symbol
Value
Unit
Collector-Base Voltage
BC856
BC857
BC858, BC859
–V
CBO
–V
CBO
–V
CBO
–V
CES
–V
CES
–V
CES
–V
CEO
–V
CEO
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
T
j
T
S
80
50
30
V
V
V
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
80
50
30
V
V
V
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
65
45
30
V
V
V
Emitter-Base Voltage
5
V
Collector Current
100
mA
Peak Collector Current
200
mA
Peak Base Current
200
mA
Peak Emitter Current
200
mA
Power Dissipation at T
SB
= 50 °C
Junction Temperature
310
1)
mW
150
°C
Storage Temperature Range
–65 to +150
°C
Type
Marking
BC859A
B
C
4A
4B
4C
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three groups A, B
and C according to their current gain. The type BC856 is
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
As complementary types, the NPN transistors
BC846…BC849 are recommended.
BC856 THRU BC859
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC856 | PNP general purpose transistors |
| BC857 | PNP general purpose transistors |
| BC857CT | High Speed CMOS Logic Dual 4-Stage Binary Counter 14-SOIC -55 to 125 |
| BC857BT | High Speed CMOS Logic Octal D-Type Flip-Flop with Data Enable 20-SOIC -55 to 125 |
| BC857BT-7 | Wideband Video Quad SPST |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC859AMTF | 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC859AMTF_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC859ATA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC859ATC | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC859AW RF | 功能描述:兩極晶體管 - BJT Transistor 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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