參數(shù)資料
型號： BC846B-1B
廠商： Zetex Semiconductor
英文描述： SOT23 NPN SILICON PLANAR
中文描述： 采用SOT23 NPN硅平面
文件頁數(shù)： 2/2頁
文件大?。?/td> 67K
代理商： BC846B-1B
DS30250 Rev. 3 - 2
2 of 2
BC846AW - BC848CW
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3) BC846
BC847
BC848
V
(BR)CBO
80
50
30
—
—
—
—
—
—
V
I
C
= 10 A, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
V
(BR)CEO
65
45
30
—
—
—
—
—
—
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BC846, BC847
(BR)EBO
6
5
—
—
V
I
E
= 1 A, I
C
= 0
DC Current Gain
Current Gain Group A
B
(Note 3) C
h
FE
110
200
420
180
290
520
220
450
800
—
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
—
90
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
—
700
900
—
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3)
V
BE(ON)
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current (Note 3)
I
CBO
I
CBO
—
—
—
—
15
5.0
nA
μA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
300
—
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
—
3.0
4.5
pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
V
CE
= 5V, I
C
= 200μA,
R
S
= 2.0k
f = 1.0kHz, f = 200Hz
XXX = Product Type Marking Code (See Page 1), e.g. K1Q = BC846AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Y
Marking Information
Notes: 3. Short duration pulse test to minimize self-heating effect.
*xx = device type, e.g. BC846AW-7.
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