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參數(shù)資料
| 型號(hào)： | BC818-40W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | BC818-40W |
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817W
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V; note 1;
see Figs 2, 3 and 4
100
5
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC817W
BC817-16W
BC817-25W
BC817-40W
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
100
100
160
250
40
600
250
400
600
700
I
C
= 500 mA; V
CE
= 1 V; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
V
CEsat
mV
V
BE
C
c
f
T
I
C
= 500 mA; V
CE
= 1 V; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
1.2
5
mV
pF
MHz
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