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參數(shù)資料
| 型號： | BC638-10 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BC638-10 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 37, 39 (NPN)
BC636, 38, 40 (PNP)
TO 92
BCE
Driver Stages of Audio Amplifier Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
BC635
BC636
45
45
BC637
BC638
60
60
5.0
1.0
800
6.4
2.75
22
-55 to +150
BC639
BC640
80
80
UNITS
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Power Dissipation@ Tc=25 deg C
Derate Above 25 deg C
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Case
From Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
VCBO
VCEO
VEBO
IC
PD
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
Tj, Tstg
Rth(j-c)
Rth(j-a)
45
156
deg C/W
deg C/W
SYMBOL
TEST CONDITION
BC635
BC636
>45
>45
BC637
BC638
>60
>60
BC639
BC640
>80
>80
UNITS
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO *
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=100uA.IE=0
IE=10uA, IC=0
VCB=30V, IE=0
V
V
V
nA
Ta=125 deg C
VCB=30V, IE=0
IC=500mA,VCE=2V
uA
V
V
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
VBE(on) *
VCE(Sat) * IC=500mA, IB=50mA
hFE*
IC=5mA, VCE=2V
.
IC=150mA,VCE=2V
<0.5
>25
40-250
40-160
40-160
Group-10
Group-16
IC=500mA,VCE=2V
>5.0
<100
<10
<1.0
>25
63 -160
100 -250
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC635RL1 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 500MA I(C) | TO-226AA |
| BC639-16ZL1 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-226AA |
| BC639AMO | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 |
| BC639RL1 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-226AA |
| BC639ZL1 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-226AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC63816 | 制造商:FCS 功能描述: |
| BC638-16 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP medium power transistors |
| BC638AMO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 |
| BC638BU | 功能描述:兩極晶體管 - BJT TO-92 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC638G | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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