參數(shù)資料
型號(hào): BC636-10
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP medium power transistors
中文描述: 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, SOT-54, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 43K
代理商: BC636-10
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
10
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
V
CE
=
2 V; see Fig.2
I
C
=
5 mA
I
C
=
150 mA
I
C
=
500 mA
I
C
=
150 mA; V
CE
=
2 V; see Fig.2
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
63
25
250
DC current gain
BC636-10
BC636-16; BC638-16; BC640-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
63
100
160
250
0.5
1
1.6
V
CEsat
V
BE
f
T
h
FE2
I
C
=
500 mA; I
B
=
50 mA
I
C
=
500 mA; V
CE
=
2 V
I
C
=
50 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
= 150 mA;
V
CE
= 2 V
V
V
MHz
h
相關(guān)PDF資料
PDF描述
BC636 PNP medium power transistors
BC640 PNP medium power transistors
BC640 COMPLEMENTARY SILICON TRANSISTORS
BC640-16 PNP medium power transistors
BC638AMO TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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