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參數(shù)資料
| 型號(hào)： | BC168 |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BC168 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
200
500
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for
BC107
V
CB
= 40 V
V
CB
= 40 V
for
BC108
V
CB
= 20 V
V
CB
= 20 V
I
C
= 10
μ
A
for
BC107
for
BC108
T
case
= 150
o
C
T
case
= 150
o
C
15
15
15
15
nA
μ
A
μ
A
μ
A
V
(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
50
30
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA
for
BC107
for
BC108
45
20
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
μ
A
for
BC107
for
BC108
6
5
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.5 mA
I
B
= 5 mA
70
200
250
600
mV
mV
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.5 mA
I
B
= 5 mA
750
950
mV
mV
V
BE(on)
Base-Emitter On
Voltage
I
C
= 2 mA
I
C
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
550
650
700
700
770
mV
mV
h
FE
DC Current Gain
I
C
= 2 mA
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
I
C
= 10
μ
A
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
V
CE
= 5 V
V
CE
= 5 V
110
110
200
110
110
200
420
40
40
100
120
90
150
120
90
150
270
450
220
450
800
220
450
800
h
fe
Small Signal Current
Gain
I
C
= 2 mA
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
I
C
= 10 mA V
CE
= 10 V f = 100 MHz
V
CE
= 5 V
f = 1KHz
250
190
300
370
190
300
500
2
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1 %
BC107/BC108
2/6
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| BC238 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| BC239 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| BC319 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| BC107C | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-206AA |
| BC107DCSM | NPN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC168A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| BC168B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| BC168C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| BC169 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC169B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
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