參數(shù)資料
型號(hào): BC161-10
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: PNP medium power transistors
中文描述: 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: TO-39, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 50K
代理商: BC161-10
1997 May 12
4
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
10
10
MAX.
100
100
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
40 V
I
E
= 0; V
CB
=
40 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
100
μ
A; V
CE
=
1 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC160-10; BC161-10
BC160-16; BC161-16
DC current gain
BC160-10; BC161-10
BC160-16; BC161-16
DC current gain
BC160-10; BC161-10
BC160-16; BC161-16
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
80
120
h
FE
I
C
=
100 mA; V
CE
=
1 V
63
100
100
160
160
250
h
FE
I
C
=
1 A; V
CE
=
1 V
50
20
30
0.6
1
1
1.7
30
180
V
CEsat
V
BE
C
c
C
e
f
T
I
C
=
1 A; I
B
=
100 mA
I
C
=
1 A; V
CE
=
1 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
50 mA; V
CE
=
10 V;
f = 100 MHz
V
V
pF
pF
MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
=
100 mA; I
Bon
=
5 mA;
I
Boff
= 5 mA
500
650
ns
ns
相關(guān)PDF資料
PDF描述
BC161-16 PNP medium power transistors
BC160 Small Signal Transistors
BC161 Small Signal Transistors
BC167 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BC318 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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