參數(shù)資料
型號(hào): BC141-16
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN medium power transistors
中文描述: 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: TO-39, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 50K
代理商: BC141-16
1997 May 12
4
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100
μ
A; V
CE
= 1 V
10
10
100
100
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
40
90
h
FE
I
C
= 100 mA; V
CE
= 1 V
63
100
100
160
160
250
h
FE
I
C
= 1 A; V
CE
= 1 V
50
20
30
0.6
1.2
1
1.8
25
80
V
CEsat
V
BE
C
c
C
e
f
T
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
V
V
pF
pF
MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
5 mA
250
850
ns
ns
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