參數(shù)資料
型號(hào): BC140
英文描述: NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
中文描述: NPN硅自動(dòng)對(duì)焦中功率功放
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 50K
代理商: BC140
1997 May 12
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC140
BC141
collector-emitter voltage
BC140
BC141
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
80
100
V
V
V
CEO
open base
65
65
40
60
7
1
1.5
200
3.7
+150
175
+150
V
V
V
A
A
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
case
45
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
in free air
200
35
K/W
K/W
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