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參數(shù)資料
| 型號(hào)： | BC140-16 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN medium power transistors |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | BC140-16 |
1997 May 12
4
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100
μ
A; V
CE
= 1 V
10
10
100
100
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
40
90
h
FE
I
C
= 100 mA; V
CE
= 1 V
63
100
100
160
160
250
h
FE
I
C
= 1 A; V
CE
= 1 V
50
20
30
0.6
1.2
1
1.8
25
80
V
CEsat
V
BE
C
c
C
e
f
T
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
V
V
pF
pF
MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
5 mA
250
850
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC141 | NPN medium power transistors |
| BC141 | NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
| BC141-10 | NPN medium power transistors |
| BC141-16 | NPN medium power transistors |
| BC140 | NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC140-16MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| BC140-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-39 |
| BC140-6 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| BC-140B1-P | 制造商:Molex 功能描述: |
| BC141 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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