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參數(shù)資料
| 型號(hào)： | BC109C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN general purpose transistors |
| 中文描述： | 100 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 55K |
| 代理商： | BC109C |
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μ
A; V
CE
= 5 V
15
15
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC107A; BC108A
BC107B; BC108B; BC109B
BC108C; BC109C
DC current gain
BC107A; BC108A
BC107B; BC108B; BC109B
BC108C; BC109C
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
40
100
90
150
270
h
FE
I
C
= 2 mA; V
CE
= 5 V
110
200
420
550
100
180
290
520
90
200
700
900
620
2.5
9
220
450
800
250
600
700
770
6
V
CEsat
mV
mV
mV
mV
mV
mV
pF
pF
MHz
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V; note 2
I
C
= 10 mA; V
CE
= 5 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CB
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 30 Hz to 15.7 kHz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
BC109B; BC109C
noise figure
BC107A; BC108A
BC107B; BC108B; BC108C
BC109B; BC109C
4
dB
F
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
10
dB
4
dB
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