參數(shù)資料
型號: BC107
英文描述: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
中文描述: NPN硅外延平面晶體管
文件頁數(shù): 3/6頁
文件大?。?/td> 70K
代理商: BC107
ELECTRICAL CHARACTERISTICS
(continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
CBO
Collector Base
Capacitance
Emitter Base
Capacitance
Noise Figure
I
E
= 0
V
CB
= 10 V
f = 1MHz
4
6
pF
C
EBO
I
C
= 0
V
EB
= 0.5 V
f = 1MHz
12
pF
NF
I
C
= 0.2 mA
f = 1KHz
I
C
= 2 mA
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
V
CE
= 5 V
R
g
= 2K
V
CE
= 5 V
B = 200Hz
f = 1KHz
2
10
dB
h
ie
Input Impedance
4
3
4.8
5.5
3
4.8
7
K
K
K
K
K
K
K
h
re
Reverse Voltage Ratio
I
C
= 2 mA
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
V
CE
= 5 V
f = 1KHz
2.2
1.7
2.7
3.1
1.7
2.7
3.8
10
-4
10
-4
10
-4
10
-4
10
-4
10
-4
10
-4
h
oe
Output Admittance
I
C
= 2 mA
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
V
CE
= 5 V
f = 1KHz
30
13
26
30
13
26
34
μ
S
μ
S
μ
S
μ
S
μ
S
μ
S
μ
S
Pulsed: Pulse duration = 300
μ
s, duty cycle
1 %
DCNormalized Current Gain.
Collector--emitterSaturationVoltage.
BC107/BC108
3/6
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