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參數(shù)資料
| 型號： | BBY42 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | VHF variable capacitance diode(VHF 可變電容二極管) |
| 中文描述： | VHF BAND, 24 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 25K |
| 代理商： | BBY42 |
1996 May 03
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BBY42
FEATURES
Excellent linearity
Small plastic SMD package
C28: 2.7 pF; ratio: 14.
APPLICATIONS
Electronic tuning in VHF television
tuners, band B up to 460 MHz
VCO.
DESCRIPTION
The BBY42 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOT23 small plastic SMD package.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
handbook, halfpage
1
3
MAM170
2
n.c.
1
3
Marking code:
S13.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 30 pF.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+125
SYMBOL
PARAMETER
CONDITIONS
MIN.
31
TYP.
24
MAX.
UNIT
I
R
reverse current
V
R
= 28 V; see Fig.3
V
R
= 28 V; T
j
= 85
°
C; see Fig.3
f =100 MHz; note 1
V
R
= 1 V; f = 1 MHz; see Figs 2 and 4
V
R
= 3 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4 2.4
f = 1 MHz
10
nA
200
1
3
nA
pF
r
s
C
d
diode series resistance
diode capacitance
pF
pF
capacitance ratio
12
16
C
C
d 28V
)
)
--------------------
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