參數(shù)資料
型號: BBF2805SK
英文描述: 18-Mbit QDR™-II SRAM 2-Word Burst Architecture
中文描述: 模擬IC
文件頁數(shù): 5/7頁
文件大?。?/td> 163K
代理商: BBF2805SK
BBF2805S
TYPICAL PERFORMANCE
GRAPHS
0.0
5.0
OUTPUT CURRENT, I
OUT
(A)
10
12
14
16
18
20
LOW LINE DROP OUT
I
I
1.0
2.0
3.0
4.0
10K
90K
70K
20K
30K 40K50K
I
I
TIME, t (500
μ
sec/DIV)
LOAD TRANSIENT RESPONSE 1000
μ
F
LINE TRANSIENT RESPONSE
EFFICIENCY CONTOURS
16
30
40
35
20
25
O
OUTPUT CURRENT, I
OUT
(A)
3.2
.4
.8
1.6
2.4
4
SET POINT RESISTOR, R
SP
(
)
TIME, t (5msec/DIV)
12
16
20
24
28
TURN ON THRESHOLD
T
T
TURN ON RESPONSE
100 200 400
FREQUENCY, f (Hz)
–100
AUDIO REJECTION
A
V
0
–20
–40
1K 2K
10K20K
100K
–60
–80
R
5.1V
0V
0V
28V
V
OUT
V
IN
TEMP = 25
°
C
30%
40%
50%
60%
68%
70%
63%
66%
71%
72%
73%
I
I
EFFICIENCY CONTOURS
16
30
40
35
20
25
OUTPUT CURRENT, I
OUT
(A)
3.2
.4
.8
1.6
2.4
4
TEMP =
125
°
C
30%
50%
60%
64%
67%
67%
69%
70%
71%
72%
73%
I
I
EFFICIENCY CONTOURS
15
30
40
35
20
25
OUTPUT CURRENT, I
OUT
(A)
3.2
.8
1.6
2.4
4
TEMP =
–55
°
C
40%
50%
55%
60%
64%
71%
66%
68%
70%
69%
INCLUDES 1000
μ
F ON OUTPUT BUS
TIME, t (200
μ
sec/DIV)
TIME, t (200
μ
sec/DIV)
LOAD TRANSIENT RESPONSE 100
μ
F
O
O
INCLUDES 100
μ
F ON OUTPUT BUS
INCLUDES 100
μ
F ON OUTPUT BUS
INCLUDES 100
μ
F ON OUTPUT BUS
TIME, t (100
μ
sec/DIV)
LOAD TRANSIENT RESPONSE
O
4A
4A
4A
2A
2A
2A
V
OUT
V
OUT
V
OUT
V
IN
16V
40V
LOAD 4A
LOAD 4A
V
OUT
I
OUT
I
OUT
I
OUT
1
1
1
1
1
1
1
1
2
1
NO OUTPUT BUS CAPCITANCE
V
IN
= 28VDC
I
OUT
= 4 Amps
O
C
TEMP = 25
°
C
Rev. - 3/01
5
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