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參數(shù)資料
| 型號(hào)： | BB809 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | VHF variable capacitance diode |
| 中文描述： | VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | BB809 |
1996 May 03
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BB809
FEATURES
High linearity
Matched to 3%
Hermetically sealed leaded glass
SOD68 (DO-34) package
C28: 4.7 pF; ratio: 9
Low series resistance.
APPLICATIONS
Electronic tuning in VHF television
tuners, band A up to 160 MHz
VCO.
DESCRIPTION
The BB809 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
30
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+100
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM159
k
a
Cathode side indicated by a yellow band on a black body.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Note
1.
V
R
is the value at which C
d
= 25 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
39
4
8
TYP.
MAX.
UNIT
I
R
reverse current
V
R
= 28 V; see Fig.3
V
R
= 28 V; T
j
= 85
°
C; see Fig.3
f = 200 MHz; note 1
V
R
= 1 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
10
200
0.6
46
nA
nA
pF
pF
r
s
C
d
diode series resistance
diode capacitance
5
10
capacitance ratio
capacitance matching
V
R
= 0.5 to 28 V
3
%
C
C
d 28V
)
)
--------------------
C
d
d
C
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